Achievement System
Japanese
KOBAYASHI Shin-ichi
Department / Course
Tokyo Polytechnic University Faculty of Engineering Department of Engineering
Job
Professor
Academic conference presentation
2017/10/17
Initial oxidation characteristics of air-exposed silicon nitride films grown at low substrate temperature using very-high-frequency plasma-enhanced chemical vapor deposition (TACT2017, The 5th International Thin Films Conference, 東華大学)
2017/02/01
IR spectroscopic study during air-exposure of silicon nitride films grown at a low substrate temperature using VHF-PECVD (10th International WorkShop on New Group IV Semiconductor Nanoelectronics)
2015/05/01
In situ IR spectroscopic study during air-exposure of silicon nitride films deposited at a low substrate temperature by PECVD (European Materials Research Society 2015 Spring Meeting)
2013/10/01
Chemical Bonding in Silicon Nitride Films Deposited with SiH4 /N2 by Very High-Frequency Plasma-Enhanced Chemical Vapor Deposition (AVS-60: American Vacuum Society 60th International Conference and Exhibition)
2013/02/01
Structural information from IR spectroscopy on a-SiNx:H deposited from SiH4 - N2 gas mixture using VHF-PECVD (6th International WorkShop on New Group IV Semiconductor Nanoelectronics)
2009/05/01
Effect of isochronal hydrogen annealing on surface roughness and threading dislocation density of epitaxial Ge films grown on Si (6th International Conference on Silicon Epitaxy and Heterostructures)
2008/09/01
Reduction in surface roughness of epitaxial Ge on Si by hydrogen annealing (4th International WorkShop on New Group IV Semiconductor Nanoelectronics)
2006/07/01
Deposition of Luminescent a-SiNx:H Films with SiH4 - N2 Gas Mixture by VHF-PECVD Using Novel Impedance Matching Method (International Conference on Optical and Optoelectronic Properties of Materials and Applications)