Achievement System - KOBAYASHI Shin-ichi | Tokyo Polytechnic University

（Last updated : 2024-09-20 16:05:27）

KOBAYASHI Shin-ichi

Department / Course Tokyo Polytechnic University Faculty of Engineering Department of Engineering

Job Professor

Academic background
～2003/09/01	Doctorial --- FinishedDoctor
～1990/03/31	Doctoral Program (1st Semester) Tohoku University Finished
～1988/03/31	Tohoku University Graduated

Business career
2018/04/01 ～	Professor Tokyo Polytechnic University Faculty of Engineering Department of Engineering

Present specialized field
Others, Others

Book and thesis
Papers	3D Index Mapping and Full Color 3D Modelling by Drone Equipped with Multispectral Camera Journal of the Society of Photography and Imaging of Japan,pp.50-55 (Co-authored) 2023/01/18
Papers	Photocatalytic properties of annealed TiO2 films with controlled structure fabricated using oxygen-ion-assisted reactive evaporation with glancing angle deposition technique 12 (1) (Co-authored) 2022/01/12
Papers	Top-emission organic light emitting diode with indium tin oxide topelectrode films deposited by a low-damage facing-target type sputtering method Thin Solid Films Vol.698,pp.137868-137868 (Co-authored) 2020/02/01
Papers	Reactive sputter deposition of WO3 films by using two deposition methods J. Vacuum Science & Technology A Vol. 37,pp.31514-31514 (Co-authored) 2019/05/01
Papers	Crystal Orientation and Electrical Properties of Tin Oxide Transparent Conducting Films Deposited on Rutile Surface 250,pp.12021-12021 (Co-authored) 2017/10/01
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Academic conference presentation
2017/10/17	Initial oxidation characteristics of air-exposed silicon nitride films grown at low substrate temperature using very-high-frequency plasma-enhanced chemical vapor deposition (TACT2017, The 5th International Thin Films Conference, 東華大学)
2017/02/01	IR spectroscopic study during air-exposure of silicon nitride films grown at a low substrate temperature using VHF-PECVD (10th International WorkShop on New Group IV Semiconductor Nanoelectronics)
2015/05/01	In situ IR spectroscopic study during air-exposure of silicon nitride films deposited at a low substrate temperature by PECVD (European Materials Research Society 2015 Spring Meeting)
2013/10/01	Chemical Bonding in Silicon Nitride Films Deposited with SiH4 /N2 by Very High-Frequency Plasma-Enhanced Chemical Vapor Deposition (AVS-60: American Vacuum Society 60th International Conference and Exhibition)
2013/02/01	Structural information from IR spectroscopy on a-SiNx:H deposited from SiH4 - N2 gas mixture using VHF-PECVD (6th International WorkShop on New Group IV Semiconductor Nanoelectronics)
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Department laboratory expense researcher number
60277944