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Faculty of arts Department of Imaging Art
> KOBAYASHI Shin-ichi
（Last updated : 2023-07-20 15:01:48）
KOBAYASHI Shin-ichi
Department / Course
Tokyo Polytechnic University Faculty of Engineering Department of Engineering
Job
Professor
Achievement
Academic background
Business career
Present specialized field
Book and thesis
Academic conference presentation
Department laboratory expense researcher number
Academic background
～2003/09/01
東北大学大学院工学研究科 電子工学専攻博士（工学）
～1990/03/31
Tohoku University
～1988/03/31
Tohoku University
Business career
2018/04/01 ～
Professor Tokyo Polytechnic University Faculty of Engineering Department of Engineering
Present specialized field
Others, Others
Book and thesis
Papers
Photocatalytic properties of annealed TiO2 films with controlled structure fabricated using oxygen-ion-assisted reactive evaporation with glancing angle deposition technique 12 (1) (Co-authored) 2022/01/12
Papers
Top-emission organic light emitting diode with indium tin oxide topelectrode films deposited by a low-damage facing-target type sputtering method Thin Solid Films Vol.698,pp.137868-137868 (Co-authored) 2020/02/01
Papers
Reactive sputter deposition of WO3 films by using two deposition methods J. Vacuum Science & Technology A Vol. 37,pp.31514-31514 (Co-authored) 2019/05/01
Papers
Crystal Orientation and Electrical Properties of Tin Oxide Transparent Conducting Films Deposited on Rutile Surface 250,pp.12021-12021 (Co-authored) 2017/10/01
Papers
IR Spectroscopic Study of Silicon Nitride Films Grown at a Low Substrate Temperature Using Very High Frequency Plasma-Enhanced Chemical Vapor Deposition World Journal of Condensed Matter Physics Vol6, No.4,pp.287-293 (Sole-authored) 2016/11/01
Display All（16）
Academic conference presentation
2017/10/17
Initial oxidation characteristics of air-exposed silicon nitride films grown at low substrate temperature using very-high-frequency plasma-enhanced chemical vapor deposition (TACT2017, The 5th International Thin Films Conference, 東華大学)
2017/02/01
IR spectroscopic study during air-exposure of silicon nitride films grown at a low substrate temperature using VHF-PECVD (10th International WorkShop on New Group IV Semiconductor Nanoelectronics)
2015/05/01
In situ IR spectroscopic study during air-exposure of silicon nitride films deposited at a low substrate temperature by PECVD (European Materials Research Society 2015 Spring Meeting)
2013/10/01
Chemical Bonding in Silicon Nitride Films Deposited with SiH4 /N2 by Very High-Frequency Plasma-Enhanced Chemical Vapor Deposition (AVS-60: American Vacuum Society 60th International Conference and Exhibition)
2013/02/01
Structural information from IR spectroscopy on a-SiNx:H deposited from SiH4 - N2 gas mixture using VHF-PECVD (6th International WorkShop on New Group IV Semiconductor Nanoelectronics)
Display All（8）
Department laboratory expense researcher number
60277944
